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Four-terminal (4T) FinFETs with independent double gates and an ideal rectangular cross-section Si-fin channel have successfully been fabricated by using newly developed orientation-dependent wet etching. The flexible threshold voltage (V/sub th/) controllability by one of the double gates arid by synchronized driving mode operation is systematically(More)
An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible V<sub>th</sub> controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately(More)
Emerging fin-type double-gate MOSFETs (FinFETs) including threshold voltage (V/sub th/) controllable 4-terminal (4T) FinFETs fabricated by a orientation-dependent wet etching technique are presented. The excellent subthreshold characteristics in the fabricated FinFETs, the accurate current and transconductance multiplication in multi-fin devices and the(More)
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