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Variable temperature electron beam induced current technique was employed for the profiling of ZnO p-n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p-type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of ϳ145 meV. The latter(More)
The effects of solid-state electron injection on the peak amplitude and decay time of photosignal in a ZnO-based homojunction UV photodiode were studied using temporal photoresponse measurements under femtosecond pulses of 355 nm radiation. The injection of about 50 C of charge, carried out by applying forward bias to the junction, resulted in a nearly(More)
Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their(More)
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