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We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the(More)
We have investigated the values of the Rashba spin-orbit coupling constant alpha in In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As quantum wells using the weak antilocalization (WAL) analysis as a function of the structural inversion asymmetry (SIA) of the quantum wells. We have found that the deduced alpha values have a strong correlation with(More)
Since the formulation of the geometric phase by Berry, its relevance has been demonstrated in a large variety of physical systems. However, a geometric phase of the most fundamental spin-1/2 system, the electron spin, has not been observed directly and controlled independently from dynamical phases. Here we report experimental evidence on the manipulation(More)
The demonstration of quantized spin splitting by Stern and Gerlach is one of the most important experiments in modern physics. Their discovery was the precursor of recent developments in spin-based technologies. Although electrical spin separation of charged particles is fundamental in spintronics, in non-uniform magnetic fields it has been difficult to(More)
We demonstrate the time reversal Aharonov-Casher (AC) effect in small arrays of mesoscopic semiconductor rings. By using an electrostatic gate we can control the spin precession rate and follow the AC phase over several interference periods. We show that we control the precession rate in two different gate voltage ranges; in the lower range the gate voltage(More)
Most future information processing techniques using electron spins in non-magnetic semiconductors will require both the manipulation and transfer of spins without their coherence being lost. The spin-orbit effective magnetic field induced by drifting electrons enables us to rotate the electron spins in the absence of an external magnetic field. However, the(More)
We demonstrated gate voltage control of spin precession in InGaAs mesoscopic ring arrays based on Rashba spin orbit interaction (SOI). We employed 100 nm ALD Al 2 O 3 and 150 nm sputtered SiO 2 gate insulators combined with large and small ring arrays to compare the gate sensitivity for the spin precession. Al'tshuler-Aronov-Spivak (AAS) oscillations were(More)
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