Junqing Lu

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Ionized metal physical vapor deposition ~IMPVD! is a process in which sputtered metal atoms from a magnetron target are ionized by a secondary plasma, accelerated into the substrate, and deposited with moderately anisotropic fluxes. The momentum and energy transfer from the sputtered metal atoms and ion-produced reflected neutrals to the background gas,(More)
The pace and quality of development of plasma equipment and processing for microelectronics fabrication have improved over the past 5 years due, in part, to the availability of increasingly sophisticated computer models for use as CAD tools. In this paper, the status of plasma equipment modeling will be reviewed and the requirements for further integrating(More)
The authors describe a novel algorithm for the intrinsic stabilization of the pulse height spectra (PHS) of multiply scattered gamma -rays which does not rely on the use of radioactive check sources, but makes gain and offset corrections based on spectral shape. In the implementation, the input spectrum is transformed (interpolated) from assumed (trial)(More)
The ionized metal physical vapour deposition (IMPVD) process is being developed to produce metal seed layers and diffusion barriers in deep contacts and vias for microelectronics fabrication. An IMPVD reactor is typically an antenna excited system where transmission line effects may produce asymmetric ion fluxes to the target and hence an asymmetric(More)
Ionized metal physical vapor deposition ~IMPVD! is a process in which sputtered metal atoms from a magnetron target are ionized by a secondary plasma before depositing onto the substrate. The sputtered metal atoms and neutralized ions reflected from the target have higher kinetic energies than the buffer gas and so are not in thermal equilibrium. These(More)
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