Junichi Tsukada

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An independent-gate four-terminal FinFET SRAM have been successfully fabricated for drastic leakage current reduction. The new SRAM is consisted of a four-terminal (4T-) FinFET which has a flexible V<sub>th</sub> controllability. The 4T-FinFET with a TiN metal gate is fabricated by a newly developed gate separation etching process. By appropriately(More)
Polycrystalline-silicon (poly-Si) and crystalline-silicon (crystal-Si) channel FinFET CMOS inverters were successfully fabricated and the variations of threshold voltage (V<sub>t</sub>) for their individual n- and p-channel transistors and the logic gate V<sub>t</sub> (V<sub>Thc</sub>) for the inverters were systematically investigated. It was found that(More)
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al 2 O 3 and SiO 2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (V t) variability, and the memory characteristics have been comparatively(More)
Influence of NiSi S/D incorporation on parasitic resistance (R<inf>para</inf>) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the R<inf>para</inf> reduction, it also causes additional R<inf>para</inf> fluctuation. Through analysis of correlation of R<inf>para</inf> with fin thickness and(More)
An adaptive-threshold-voltage differential pair and a low-voltage source follower using independent-double-gate-(IDG-) FinFETs are proposed for a low-voltage operational amplifier (op amp). These circuits were implemented by our FinFET technology that enables co-integration of connected-DG- (CDG-) and IDG-FinFETs. The proposed components enable a two-stage(More)
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