Junichi Motohisa

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We report a strong Kondo effect (Kondo temperature approximately 4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias(More)
We propose a O(1) algorithm for bilateral filter with low memory usage. Bilateral filter can be converted into weighted histogram operation. Applying line buffers of column histograms, we can reduce the number of calculation needed to construct recursive center-weighted local histogram. Also our method have advantage in terms of memory requirements. We used(More)
The excited states of neutral and charged single InGaAs/GaAs quantum dots are studied using a confocal microspectroscopy technique. Because of their different Coulomb energy shifts, the charged and neutral states of the same quantum dot can be selectively excited. The charge of the quantum dot is controlled by a photo-depletion mechanism. Time-resolved(More)
We describe a high-speed method of correcting and compressing the dynamic range of images that can be operated intuitively and naturally. Adaptive operations are conducted for shadow, middle, and highlight tones in the local areas of images. Although natural image processing can be achieved with default parameters, we can set the parameters for each of(More)
MOSFETs using III-V channels with multi-gate architecture and tunnel junctions are promising alternative building blocks for high-performance and low power nanoelectronic circuits. CMOS. In this paper, we review recent advances in direct integration of vertical III-V nanowire (NW)-channel on Si and FET application such as vertical III-V NW surrounding-gate(More)
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