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Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8 " wafers. Large I ON at low V DD are possible according to TCAD simulations but awaits verification. V DD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type(More)
We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO<inf>2</inf> high-k gate dielectrics exhibited low C-V hysteresis (&#x226A;10 mV), interface trap density (7.5&#x00D7;10<sup>10</sup>), and gate leakage current(More)
SUMMARY We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation ,(More)
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