Jungwoo Oh

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Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been clearly demonstrated on 8 " wafers with statistical data. Large I ON at low V DD are possible according to TCAD simulations but awaits verification. V DD scaling will greatly benefit from low (effective) band gap energy materials,(More)
Lightweight, simple and flexible self-powered photodetectors are urgently required for the development and application of advanced optical systems for the future of wearable electronic technology. Here, using a low-temperature reduction process, we report a chemical approach for producing freestanding monolithic reduced graphene oxide papers with different(More)
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