Jungwoo Oh

Learn More
Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8 " wafers. Large I ON at low V DD are possible according to TCAD simulations but awaits verification. V DD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type(More)
prepared and characterized the material. All authors contributed to the discussion ". This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not(More)
Lightweight, simple and flexible self-powered photodetectors are urgently required for the development and application of advanced optical systems for the future of wearable electronic technology. Here, using a low-temperature reduction process, we report a chemical approach for producing freestanding monolithic reduced graphene oxide papers with different(More)
SUMMARY We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation ,(More)
for your friendship and providing me such a friendly and collaborative working environment, making my graduate life enjoyable. I also want to thank staffs at MER, Jean Toll, Carol Assadourian for your sincerely help and assistance during my graduate study. Huchison for your sincere friendship, genuine caring, and earnest advice and help. I feel so lucky to(More)
  • 1