Jung-In Hong

  • Citations Per Year
Learn More
We have developed a 1.29 um2 full CMOS SRAM cell for low power applications, which is the world-smallest one by using 0.12 um single gate CMOS technology and optical enhancement techniques for extending use of 248 nm KrF lithography. It includes (1) 0.28 um pitch contacts formed by aerial image controlled patterns on phase shift mask (PSM) and photo resist(More)
  • 1