Junbiao Peng

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Absorption spectra of polymer FBT-Th4 (1,4) (M n = 46.4 Kg/mol, E g = 1.62 eV, and HOMO = -5.36 eV) indicate strong interchain aggregation ability. High hole mobilities up to 1.92 cm(2) (V s)(-1) are demonstrated in OFETs fabricated under mild conditions. Inverted solar cells with active layer thicknesses ranging from 100 to 440 nm display PCEs exceeding(More)
In the application of traditional bulk heterojunction polymer solar cells, to prevent the etching of ITO by the acidic poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and thereby improve the device stability, pH-neutral PEDOT:PSS is introduced as the hole transport layer (HTL). After treating the neutral PEDOT:PSS with UV-ozone and with(More)
Adopting the emerging technology of printed electronics in manufacturing novel ultrathin flat panel displays attracts both academic and industrial interests because of the challenge in the device physics and the potential of reducing production costs. Here we produce all-solution processed polymer light-emitting diode displays by solution-depositing the(More)
This tutorial review presents some recent developments in the design, synthesis and implementation of organic solution-processable molecular fluorophores for non-doped electroluminescent [corrected] devices. After a brief presentation of the basic principles of operation and main characteristics of electroluminescent devices, some examples of active(More)
We designed and synthesized the DPPEZnP-TEH molecule, with a porphyrin ring linked to two diketopyrrolopyrrole units by ethynylene bridges. The resulting material exhibits a very low energy band gap of 1.37 eV and a broad light absorption to 907 nm. An open-circuit voltage of 0.78 V was obtained in bulk heterojunction (BHJ) organic solar cells, showing a(More)
A new category of deep-absorbing small molecules is developed. Optimized devices driven by mixed additives show a remarkable short-circuit current of ≈20 mA cm(-2) and a highest power conversion efficiency of 9.06%. A multi-length-scale morphology is formed, which is fully characterized by resonant soft X-ray scattering, high-angle annular dark film image(More)
The use of white organic light-emitting devices (WOLEDs) for solid-state lighting applications is becoming increasingly attractive, [ 1 − 5 ] given that legislation in more countries is banning the use of ineffi cient incandescent lamps. Moreover, since fl uorescent lamps involve the use of mercury and its disposal represents a great challenge, many(More)
A chromaticity-adjustable yellow thermally activated delayed fluorescence (TADF) material, PXZDSO2 as a triplet harvester provides a rational device concept, giving two-color and three-color pure organic white organic light-emitting diodes (WOLEDs) with unprecedented color-rendering index of 95 and external quantum efficiency of 19.2%.
The control of channel length is of great significance in the fabrication of thin film transistors (TFTs) with high-speed operation. However, achieving short channel on untreated glass by traditional piezoelectric inkjet printing is problematic due to the impacting and rebounding behaviors of droplet impinging on solid surface. Here a novel method was(More)
Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance(More)