Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped AluminumLinfeng Lan, Mingjie Zhao, +4 authors Junbiao PengIEEE Electron Device Letters2012Neodymium-doped aluminum (Al-Nd) was used as a gate electrode and was anodized, forming a layer of Nd:Al<sub>2</sub>O<sub>3</sub> as the dielectric for indium-zinc oxide (IZO) thin-film transistors… (More)