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A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A 0.053um<sup>2</sup> SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at(More)
We demonstrate a simplified Brillouin optical time-domain analysis system based on direct current modulation of a laser diode which is configured and optimized for long-range measurement. A precompensated low-frequency RF wave is applied for time-division generation of Brillouin pump and probe waves without using any microwave device. Low-speed frequency(More)
A channel-selective super regenerative receiver (SRR) system is proposed with improved channel selectivity. The proposed SRR system operates only at a valid incoming signal due to the RF spectrum sensing functionality. To overcome the rough channel selectivity of the SRR, a systemic methodology is proposed for controlling quenching signal waveforms. From(More)
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