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We present a hybrid nanoelectromechanical (NEM)/CMOS static random access memory (SRAM) cell, in which the two pull-down transistors of a conventional CMOS six transistor (6T) SRAM cell are replaced with NEM relays. This SRAM cell utilizes the infinite subthreshold slope and hysteretic properties of NEM relays to dramatically increase the cell stability(More)
A high-Q, tunable, micromechanical capacitor has been realized using an IC-compatible, electroplated-metal, surface-micromachining technology and demonstrated with quality (Q-) factors in excess of 290—the highest reported to date for on-chip tunable capacitors at frequencies near 1 GHz. The key feature in this design that makes possible such high on-chip Q(More)
—We present fully integrated high-performance voltage-controlled oscillators (VCOs) with on-chip microelec-tromechanical system (MEMS) inductors for the first time. MEMS inductors have been realized from the unique CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high-quality () factors. Fully integrated(More)
— Using novel micromachining technology, various three-dimensional (3D) on-chip inductors have been fabricated to achieve high performance and small area occupation for GHz applications. We have obtained 14nH, a peak Q of 38 at 1.8GHz with area occupation of 500µm by 500µm excluding pads (56nH/mm 2) from a stacked spiral inductor on a glass substrate. Also,(More)
A new spiral-type suspended transformer for silicon radio frequency integrated circuits (RF ICs) has been fabricated by surface micromachining technology. The fabricated transformer on standard silicon substrate has shown a low insertion loss of 1.9dB at 1GHz by reducing substrate coupling and ohmic loss using the proposed MEMS technology. Equivalent(More)
Nanoelectromechanical (NEM) switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The NEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in(More)
This paper describes a sensor for label-free, fully electrical detection of DNA hybridization based on capacitive changes in the electrode-electrolyte interface. The sensor measures capacitive changes in real time according to a charging-discharging principle that is limited by the hysteresis window. In addition, a novel autonomous searching technique,(More)