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1 :30 PM VII.B-1 Student Paper N-polar GaN HEMTs with f max > 300 GHz using high-aspect-ratio T -gate design D.J. Denninghoff1, S. Dasgupta1, D.F. Brown3, S. Keller1, J. Speck2, and U.K. Mishra\ 1(More)
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