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  • Juan A. Jiménez Tejada, A. L. Rodriguez, +4 authors M. Jamal Deen
  • Physics
  • IEEE Transactions on Electron Devices
  • 2012 (First Published: 1 February 2012)
  • The effects of imperfections on the electrical performance of four-gate field-effect transistors (G4-FETs) have been studied. Variations in the oxide trap distribution and in the metallurgicalContinue Reading