Jr-Jie Tsai

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Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and(More)
This work numerically elucidates the effects of dopant-segregated layers on the cell window in multi-bit Schottky barrier charge-trapping cells. Successive injection-trapping iteration analysis was performed to properly study the coupling of trapped charges and Schottky barrier lowering during cell programming. The results showed the dopant-segregated(More)
A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory can operate at gate voltages of 5 to 7 V for(More)
Article history: Received 24 November 2016 Received in revised form 19 March 2017 Accepted 26 April 2017 Available online xxxx This work numerically elucidates the effects of gate-to-source/drain misalignments on source-side injection Schottky barrier charge-trappingmemory cells. The coupling of Schottky barriers and trap charges generate particular(More)
Unique drain-controlled ambipolar conduction and hot-hole injection were reported in Schottky barrier charge-trapping cell devices. This work numerically elucidated the particular hole conduction and associated hot-hole injection that were sorely induced by drain voltages. At a sufficient drain voltage, the hole carriers can pass through the drain-side(More)
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