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Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene(More)
We in situ probed the surface band bending (SBB) by ultraviolet photoelectron spectroscopy (UPS) in conjunction with field-effect transistor measurements on the incompletely depleted ZnO nanowires (NWs). The diameter range of the NWs is ca. 150-350 nm. Several surface treatments (i.e., heat treatments and Au nanoparticle (NP) decoration) were conducted to(More)
We demonstrated the Au nanoparticle (NP) decoration as an effective way to enhance both photocurrent and photoconductive gain of single ZnO nanowire (NW) photodetectors (PDs) through localized Schottky effects. The enhancement is caused by the enhanced space charge effect due to the existence of the localized Schottky junctions under open-circuit conditions(More)
A plasma-polymerized acrylonitrile (PP-AN)/ZnO nanobelt (NB) nanosensor reveals a better oxygen-sensing response than a bare ZnO NB nanosensor due to the sorption nature of the polymer. With the aid of UV light, significant response enhancements of PP-AN/ZnO NB nanosensors at low temperature have been observed since the effects of oxygen(More)
  • Po-Kang Yang, Long Lin, +7 authors Zhong Lin Wang
  • 2015
A flexible triboelectric nanogenerator (FTENG) based on wavy-structured Kapton film and a serpentine electrode on stretchable substrates is presented. The as-fabricated FTENG is capable of harvesting ambient mechanical energy via both compressive and stretching modes. Moreover, the FTENG can be a bendable power source to work on curved surfaces; it can also(More)
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working(More)
We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which(More)
Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a(More)
This study describes a strategy for developing ultra-high-responsivity broadband Si-based photodetectors (PDs) using ZnO nanorod arrays (NRAs). The ZnO NRAs grown by a low-temperature hydrothermal method with large growth area and high growth rate absorb the photons effectively in the UV region and provide refractive index matching between Si and air for(More)
A novel strategy employing core-shell nanowire arrays (NWAs) consisting of Si/regioregular poly(3-hexylthiophene) (P3HT) was demonstrated to facilitate efficient light harvesting and exciton dissociation/charge collection for hybrid solar cells (HSCs). We experimentally demonstrate broadband and omnidirectional light-harvesting characteristics of core-shell(More)