Jr-Hau He

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Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene(More)
Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a(More)
The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via(More)
In this paper, a ZnO-based transparent resistive random access memory that employs graphene as a transparent and stable resistive element with switching characteristics usable in memory applications is described. ABSTRACT | A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent(More)
Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying(More)
We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton(More)
When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their(More)
With increasing interest in visible light communication, the laser diode (LD) provides an attractive alternative, with higher efficiency, shorter linewidth and larger bandwidth for high-speed visible light communication (VLC). Previously, more than 3 Gbps data rate was demonstrated using LED. By using LDs and spectral-efficient orthogonal frequency division(More)
Syringe-like ZnO nanorods (NRs) were fabricated on InGaN/GaN light emitting diodes (LEDs) by a hydrothermal method. Without sacrificing the electrical performances of LEDs, syringe-like NRs can enhance light extraction capability by 10.5% at 20 mA and shape the radiation profile with a view angle collimated from 136° to 121°. By performing optical(More)
We studied the dependence of the output of the piezoelectric nanogenerator (NG) on the inclining orientation of the ZnO nanowire arrays (NWAs). The oblique-aligned NWAs were grown by combing a modified oblique-angle sputtering technique for preparing the seed layer and hydrothermal growth. The piezoelectric output of the NWAs was studied by scanning the tip(More)