Jr-Hau He

Der-Hsien Lien8
Yu-Lun Chueh6
Yu-Ze Chen3
8Der-Hsien Lien
6Yu-Lun Chueh
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Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene(More)
  • Der-Hsien Lien, Jeong Seuk Kang, Matin Amani, Kevin Chen, Mahmut Tosun, Hsin-Ping Wang +7 others
  • 2015
When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their(More)
In this paper, a ZnO-based transparent resistive random access memory that employs graphene as a transparent and stable resistive element with switching characteristics usable in memory applications is described. ABSTRACT | A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent(More)
The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via(More)
We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton(More)
The electronic and optical properties of transition-metal dichalcogenide (TMD) materials are directly governed by their energy gap; thus, band-gap engineering has become an important topic recently. Theoretical and some experimental results have indicated that these monolayerTMD alloys exhibit direct-gap properties and remain stable at room temperature,(More)
An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3(More)
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density,(More)
The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline(More)
Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured(More)