Josip Žilak

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The Horizontal Current Bipolar Transistor (HCBT) technology, as an innovative concept of bipolar-CMOS integration, is presented. This low-cost integration, achieved by using only 2 or 3 additional lithography masks, allows the fabrication of HCBTs with high-performance characteristics (i.e., f<inf>T</inf> &#x003D; 51 GHz, f<inf>max</inf> &#x003D; 61 GHz,(More)
A method for improvement of breakdown voltage of the Horizontal Current Bipolar Transistor (HCBT) by application of floating field plates (FFPs) is presented. The FFPs are used for shaping of the potential distribution and the electric field in the base-collector depletion region. The BV<inf>CEo</inf> improvement from 13 V to 25 V by the addition of one FFP(More)
A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high-speed transistor is obtainedwith full depletion of the intrinsic collectorby using implanted CMOS p-well region. Transistors with <inline-formula> <tex-math notation="LaTeX">$\text {BV}_{\text {CEO}} = {10.5}$(More)
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