Joseph Staudinger

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Low power adaptive pre-distortion (APD) techniques are applied to nonlinear RF power amplifiers for mobile devices. An APD system is demonstrated which reduces spectral regrowth products by 10-20 dB and increases modulation accuracy by 2-6X. The use of APD allows a reduction in 3 G PA supply current by 2X and provides immunity to load mismatches as high as(More)
A consequence of high spectral efficiency provided by second and third generation cellular systems is the requirement for linear power amplifiers in the transmitter unit of the mobile handset. The battery nature of the mobile phone emphasizes high amplifier efficiency for extending talk time and battery life. This represents an inherent trade-off between(More)
We have demonstrated a 1W 1.8~2.2GHz high efficiency and high linearity power amplifier that was fabricated in a InGaP hetero-junction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. The 2-stage power amplifier was biased at Class AB with 60mA quiescent current and showed 28dB gain. In conjunction with the linearization(More)
The Volterra series is a well-established technique for modeling nonlinear dynamic system. Their wide adoption in predicting the behavior of Radio Frequency Power Amplifiers has been significantly hindered by the large number of coefficients involved especially when they exhibit high order of nonlinearity and strong memory effects. In this paper, we present(More)
This paper proposes the calculation of memory residual (MR) and adjacent channel power ratio (ACPR) as figures-of-merit (FOM) for the analysis of linearizability of a high power RF Doherty amplifier circuit. Two-tone and wideband code division multiple access (WCDMA) signals of increasing bandwidths and varying power levels are used for the calculation of(More)
This paper proposes a new behavioral PA modeling scheme which combines existing pruned Volterra (PV) model with infinite impulse response (IIR) basis functions. These IIR basis functions are inherently composed of a parallel structure of single-pole IIR filters, summed at the output. Performance of this new IIR-PV model is found to be significantly better(More)
This paper presents an innovative technique of adapting the Dynamic Deviation Reduction (DDR) Volterra series behavioral model to describe very accurately high power RF amplifiers (PAs) targeting cellular infrastructure applications. A coefficient pruning concept is introduced with the goal of reducing model complexity and the number of series coefficients,(More)
Development of an experimental behavioral model to describe the non-linear characteristics of high power internally pre-matched LDMOS power transistors is presented. The model is developed by characterizing the device with swept power load-pull measurements across a large load impedance plane with the input impedance set at a pre-determined state. Based on(More)
The effect of harmonic load terminations on the linearity of a GaAs MESFET power amplifier is examined for both sinusoidal and /spl pi//4 DQPSK stimuli. A large signal model is utilized with harmonic balance and envelope simulation methods to predict distortion performance of a GaAs MESFET based RF power amplifier targeting domestic TDMA cellular radio(More)
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