Joseph P. Donnelly

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In this work, we modified our wafer-scale 3D integration technique, originally developed for Si, to hybridize InP-based image sensor arrays with Si readout circuits. InGaAs image arrays based on the InGaAs layer grown on InP substrates were fabricated in the same processing line as silicon-on-insulator (SOI) readout circuits. The finished 150-mm-diameter(More)
Wavelength beam combining was used to co-propagate beams from 28 elements in an array of distributed-feedback quantum cascade lasers (DFB-QCLs). The beam-quality product of the array, defined as the product of near-field spot size and far-field divergence for the entire array, was improved by a factor of 21 by using wavelength beam combining. To demonstrate(More)
Enhancements of the continuous-wave four-wave mixing conversion efficiency and bandwidth are accomplished through the application of plasma-assisted photoresist reflow to reduce the sidewall roughness of sub-square-micron-modal area waveguides. Nonlinear AlGaAs optical waveguides with a propagation loss of 0.56 dB/cm demonstrate continuous-wave four-wave(More)
  • Christine A Wang, Anish Goyal, Robin Huang, Joseph Donnelly, Daniel Calawa, George Turner +4 others
  • 2010
Keywords: A2. Metalorganic vapor phase epitaxy A3. Quantum wells A3. Semiconducting III–V materials B3. Heterojunction semiconducting devices B3. Quantum cascade lasers a b s t r a c t Strain-compensated (SC) GaInAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by(More)
We discuss the design and demonstration of highly efficient 1.55 µm hybrid III-V/Silicon semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al 0.10 In 0.71 Ga 0.18 As multiple quantum wells (MQW) and Al 0.48 In 0.52 As electron stop layers to realize SOAs with high wall-plug efficiency (WPE). We present various designs and(More)
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