Joseph C. Woicik

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Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric(More)
We have measured the site-specific valence electronic structure of ␣-Fe 2 O 3 by using a spatially modulated x-ray standing wave as the excitation source for photoemission. Contributions to the valence-band density of states from oxygen and iron ions are separated by this method. Both a bonding and nonbonding state originating from oxygen ions are obtained.(More)
Synchrotron Radiation Facilities, supported by the Materials Science and Engineering Laboratory of the National Institute of Standards and Technology, include beam stations at the National Synchrotron Light Source at Brookhaven National Laboratory and at the Advanced Photon Source at Argonne National Laboratory. The emphasis is on materials characterization(More)
We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO_{3}, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results(More)
Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the(More)
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