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Journals and Conferences
We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.
This thesis explores the relationship between philosophy and policy in the context of three California policies, Determinate Sentencing, Three Strikes, and Realignment. The philosophy portion… (More)
CMOS Ge-on-Si pnn multimode laser diode is demonstrated. Calculated losses suggest a gain above 100cm<sup>-1</sup>. Observed power of above 1mW is reported.
We present recent progress in monolithic Ge-on-Si lasers for on-chip electronic-photonic integration, with a highlight on electrically-pumped Ge-on-Si lasers with ~1 mW output at λ~1530-1650… (More)