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Reducing leakage in memories is critical to reduce static power consumption in nanometric technologies. A wide-spread technique for reducing the leakage consists of lowering the supply voltage on the SRAM module. The paper investigates the effect of lowering the supply voltage on the robustness of a 6T SRAM cell, both in saturation and sub-threshold(More)
As technology is scaled down in the nanometric dimensions of the devices, the variability of the manufacturing process on the circuit parameters becomes critical. In addition, environmental changes in power supply voltages and temperature on chip gradients add new uncertainties on future electronic circuits and systems. The VLSI design paradigms are to be(More)
Increased process variations in nano-scaled technologies lead to parametric failures in embedded SRAMs. The reduction of the supply voltage in order to ensure low leakage power leads to a decrease in robustness. These are the main factors which affect the failure probability and so the circuit yield. A widely used technique to determine the failure(More)
Background. The relationship and behavior of serum imunoglobulin E (IgE) level, peripheral blood mononuclear cell (PBMC) human leukocyte antigen DR (HLA-DR) expression and erythrocyte glutathione antioxidant pathway in asthma patients treated with systemic ozone therapy, have not been studied before. Methods. Asthma patients were treated about 1 year with(More)
The most c ommon prac tic e to model the transistor c hain, as it appears in CMOS gates, is to c ollapse it to a single equivalent transistor. This method is analyzed and improvements are presented in this paper. Inherent shortc omings are removed and an effec tive transistor width is c alc ulated taking into ac c ount the operating c onditions of the struc(More)
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