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Titanium nitride (TiN) films were tested for their suitability as upper electrodes in metal–oxide–semiconductor (MOS) capacitors and Schottky diodes and as metal gate electrodes in fin field effect… Continue Reading
Titanium nitride (TiN) films have been used as gate electrodes in metal-oxide-semiconductor (MOS) capacitors, which were fabricated with SiO"2 layer as gate dielectric, and as upper electrodes in… Continue Reading
Tantalum nitride (TaN) films were used as gate electrodes in MOS capacitors fabricated with 8-nm-thick SiO2 as gate dielectric, and also used in Schottky diodes on n-type Si (100) substrates. TaN… Continue Reading
Silicon oxynitride (SiO/sub x/N/sub y/) insulators have been obtained by low-energy nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. Theses films have… Continue Reading
Silicon oxynitride (SiO x N y ) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate… Continue Reading
Oxynitrides (SiO x N y ) have been used as gate insulators for submicron devices . The present work reports the oxynitride formation at SiO 2 /Si structure by N 2 + implantation at low energies.… Continue Reading