Jordi Everts

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A switching control strategy to enable Zero-Voltage-Switching (ZVS) over the entire input-voltage interval and the full power range of a single-stage Dual Active Bridge (DAB) AC/DC converter is proposed. The converter topology consists of a DAB DC/DC converter, receiving a rectified AC line voltage via a synchronous rectifier. The DAB comprises primary and(More)
A switching control strategy to extend the zero-voltage-switching (ZVS) operating range of a Dual Active Bridge (DAB) AC/DC converter to the entire input-voltage interval and the full power range is proposed. The converter topology consists of a DAB DC/DC converter, receiving a rectified AC line voltage via a synchronous rectifier. The DAB comprises a(More)
A comprehensive procedure for the derivation of optimal, full-operating-range zero voltage switching (ZVS) modulation schemes for single-phase, single-stage, bidirectional and isolated dual active bridge (DAB) ac-dc converters is presented. The converter topology consists of a DAB dc-dc converter, receiving a rectified ac line voltage via a synchronous(More)
III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented:(More)
A semi-analytical modulation scheme to operate a single-phase, single-stage dual active bridge (DAB) AC-DC converter under full-operating-range zero voltage switching (ZVS) is proposed. The converter topology consists of a DAB DC-DC converter, receiving a rectified AC line voltage via a synchronous rectifier. ZVS modulation strategies previously proposed in(More)
A generic, Fourier-based method for the derivation of optimal, full-operating-range zero voltage switching (ZVS) modulation schemes for dual active bridge (DAB) converters is presented. Thereby, the AC-link voltages and currents, and the DAB's input current and power flow, are described using trigonometric Fourier series. Furthermore, the amount of charge(More)
This paper investigates the impact of three transformer winding configurations, i.e., the Y-Y, the Y-Δ, and the Δ-Δ configuration, on the performance of a three-phase dual active bridge (DAB) dc-dc converter. For each configuration, equations for the phase currents, power flow, and zero-voltage switching (ZVS) boundaries are derived for(More)
Wide-bandgap (WBG) semiconductors, such as gallium nitride (GaN), are more and more being used in switching power devices. An AlGaN/GaN/AlGaN Double Heterojunction Field Effect transistor (DHFET) was developed in previous work and needed to be tested. The used test circuit was a buck converter. This type of converter, in addition with the normally-on(More)
For determining the dynamic on-resistance R<sub>dyn,on</sub> of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when the range of the measurement channel is not set(More)
This paper presents a Zero Voltage Switching (ZVS) modulation strategy for the 3 Level - 5 Level (3-5L) Dual Active Bridge (DAB) DC-DC converter. The DAB accommodates a full bridge in the primary side and two 3-level T-Type bridge legs in the secondary side, linked by a high-frequency transformer and an inductor. A ZVS modulation strategy is presented, in(More)