Joosung Yun

Learn More
Phase Change RAM (PCM) is a promising candidate of emerging memory technology to complement or replace existing DRAM and NAND Flash memory. A key drawback of PCMs is limited write endurance. To address this problem, several static wear-leveling methods that change logical to physical address mapping periodically have been proposed. Although these methods(More)
Phase change memory (PCM) has a write endurance problem. This problem is exacerbated due to endurance variations (EVs) when using advanced process technology (e.g., sub-20 nm), where PCM is expected to provide scaling benefits over dynamic random access memory (RAM). Wear leveling can solve this problem by dynamically changing the mapping from memory(More)
  • 1