Jongho Son

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In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made of 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density of ∼1 × 10(-7) A cm(-2) at 2 V(More)
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