Jone F. Chen

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—This paper identifies and investigates a new source of random threshold voltage variation, which is referred to as Grain-Orientation-induced Quantum Confinement (GOQC) in emerging ultra-thin-body metal-gate complementary metal– oxide–semiconductor (CMOS) devices including FinFET, tri-gate, and nanowire field-effect transistors. Due to the dependence of the(More)
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