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Journals and Conferences
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in… (More)
We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.
We present a design for a low-footprint optical interconnect that efficiently couples between two photonic planes with significant vertical separation up to 10 μm and a footprint less than 10 μm × 10… (More)
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous… (More)
Tensile strained Ge films with P concentrations as high as 3.4 × 10<sup>19</sup> cm<sup>−3</sup> are grown using UHVCVD. Photoluminescence measurements reveal significant direct band gap narrowing,… (More)
CMOS Ge-on-Si pnn multimode laser diode is demonstrated. Calculated losses suggest a gain above 100cm-1. Observed power of above 1mW is reported.
We present recent progress in monolithic Ge-on-Si lasers for on-chip electronic-photonic integration, with a highlight on electrically-pumped Ge-on-Si lasers with ~1 mW output at λ~1530-1650 nm.
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important… (More)
We present designs for stacked Si microring couplers for compact exchange of optical signals between photonic planes separated vertically in excess of 10 μm with wide bandwidth and flat pass-bands.