Jonathan Roderick

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A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. A low-loss wide-band two-way Wilkinson power combiner is used for on-chip power dividing and combining at the input and output of the design. A mm-wave layout-aware class-E design procedure has been followed to enable efficient switching mode(More)
This paper documents an ultra-wideband (UWB) fully integrated beamformer which features controllable true time delay and power gain. The UWB beamformer accomplishes 4-bit delay variation with 4 ps resolution, 5 dB gain variation in 1 dB steps, and a -3dB gain bandwidth of 11.2 GHz. Overall operation is achieved by the integration of a three-bit tapped delay(More)
A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. A mm-wave Class-E architecture considering the effect of various interconnect parasitics is adopted to achieve high power efficiency. Proper input and output networks have been designed to enable efficient switching of the HBT at large voltage(More)
Design equations and performance limits of stacked Class-E power amplifiers at mm-waves, including the limitations imposed by device parasitics, are presented in this paper. As a proof of concept of this parasitic aware mm-wave Class-E design methodology and to demonstrate the beyond BVCEO Class-E operation in a stacked architecture at mm-wave frequencies,(More)
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