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III -nitride photonic-crystal light-emitting diodes with high extraction efficiency
Blue light-emitting diodes with a light extraction efficiency of 73% are reported. The InGaN–GaN devices use a photonic-crystal structure for superior optical mode control; their performance has been
Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting
Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL
Toward Smart and Ultra‐efficient Solid‐State Lighting
Solid‐state lighting has made tremendous progress this past decade, with the potential to make much more progress over the coming decade. In this article, the current status of solid‐state lighting
Four-color laser white illuminant demonstrating high color-rendering quality.
TLDR
It is a common belief that white light produced by a set of lasers of different colors would not be of high enough quality for general illumination, but it is found that the opposite is true, and this result paves the way for the use of lasers in solid-state lighting.
High-power AlGaInN flip-chip light-emitting diodes
Data are presented on high-power AlGaInN flip-chip light-emitting diodes (FCLEDs). The FCLED is “flipped-over” or inverted compared to conventional AlGaInN light-emitting diodes (LEDs), and light is
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the
The potential of III‐nitride laser diodes for solid‐state lighting
The potential of III-nitride based laser diodes (LDs) for solid-state lighting (SSL) is discussed. State-of-the-art blue LDs have higher efficiencies at high input power densities when compared to
High Power LEDs – Technology Status and Market Applications
High power light emitting diodes (LEDs) continue to increase in output flux with the best III-nitride based devices today emitting over 150 lm of white, cyan, or green light. The key design features
Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
InGaN–GaN multiple-quantum-well light-emitting diodes were fabricated on (101¯0) m plane GaN films grown on (101¯0) m plane 4H–SiC substrates. The [0001] axis of the epitaxial film is parallel to the
High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates.
TLDR
Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.
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