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Understanding the responses of tundra systems to global change has global implications. Most tundra regions lack sustained environmental monitoring and one of the only ways to document multi-decadal change is to resample historic research sites. The International Polar Year (IPY) provided a unique opportunity for such research through the Back to the Future(More)
A 4 Mbit Magnetoresistive Random Access Memory (MRAM) with a new magnetic switching mode is described. The memory cell is based on a 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) bit cell. The 4 Mbit MRAM circuit was designed in a five level metal, 0.18 /spl mu/m CMOS process with a bit cell size of 1.55 /spl mu/m/sup 2/. A new cell architecture, bit(More)
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