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—This paper describes a constant impedance transmission line pulse system with new measurement capabilities and improved accuracy. The paper enforces a broader look at transmission line pulse (TLP) data, beyond the – curves. Accurate TLP measurements and actual TLP/HBM device data are used to demonstrate effects and HBM/TLP correlation and miscorrelation.(More)
– In this work, we demonstrate that both capacitance and inductance must be the central parameters associated with the Charged Device Model (CDM) waveform verification modules. We also propose a change from the previously used FR-4 dielectric material substrate to a more stable Alumina. This improves waveform repeatability and will lead to better(More)
This paper discusses the previously unexplored initial front rise differences between Real HBM, TLP and HBM tester waveshapes. The dV/dt of the HBM test pulse amplitude below 2% has been shown to affect the high current immunity of Snapback type ESD protection circuits, and should replace the present time specification for a high voltage HBM pulse to rise(More)
The IC industry continues to find ways to improve the ability to correlate the electrical failure signature of devices with the physical failure location using different techniques. The purpose of this work is to show that improved transmission line pulse (TLP) testing technique of ESD (ElectroStatic Discharge) protection structures can provide accurate(More)
A new technique for accurately tracking leakage currents has emerged. The integrated circuit (IC) industry has been using transmission-line pulse (TLP) testing to characterize on-chip electrostatic discharge (ESD) protection structures since 1985. This TLP ESD testing technique was introduced by Maloney and Khurana as a new electrical analysis tool to test(More)
– Parameters associated with an observed variation in CDM ESD waveforms are shown to be pogo pin diameter, pogo pin length, ground plane size, and distance between ground plane and charge plate. The effects on resulting discharge waveforms and solutions for improvement of existing CDM standards will be discussed.
Damage signatures from Electrical Overstress (EOS) are the leading reported cause of returns in integrated circuits and systems that have failed during operation. Solutions to this problem are hindered by a prevailing misconception in the electronics industry that insufficient robustness to electrostatic discharge (ESD) is a primary cause of EOS. This(More)
Over the last twenty years, an increasing misconception between system level designers (OEMs) and semiconductor component (IC) providers has become very apparent relating to three specific ESD issues: ‐ ESD test specification requirements of system vs. IC providers; ‐ Understanding of ESD failures in terms of physical failure and system upset and what(More)
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