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On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of(More)
We present a physical approach to model the dual gate CNTFET. In this transistor, whose type (N or P) depends on the back gate bias, the charge of each region (source and drain accesses and inner part) remains an essential quantity to evaluate the channel potential and thus the drain current. The charges are calculated (i) considering 0 or 1 carrier(More)
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