John P Romankiewicz

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Three types of two-terminal CdS nanowire devices with distinct current versus voltage characteristics were fabricated by forming Schottky and/or Ohmic contacts in a controlled manner. Argon ion bombardment of CdS nanowires increased the carrier concentration allowing the formation of Ohmic Ti–CdS contacts. Scanning photocurrent microscopy ͑SPCM͒ was used to(More)
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