John Gritters

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Industry's first 600-V GaN-on-Si switching transistors have passed qualification based on Jedec standards and entered commercial market. Although far from being optimized, these 1st generation GaN devices exhibit properties superior to matured Si counterparts including lower on-resistance, much reduced input/output charges, and much higher switching speed.(More)
With its proven ability to reduce size (form factor) and save energy (high efficiency) Gallium Nitride (GaN) is now no longer a nice to have, it is a must-have for power conversion. In applications ranging from sub 100 watt ultra-compact high frequency adapters to multi kilowatt highly efficient PV inverters, GaN makes it possible to do what Silicon cannot.(More)
Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonstrated with over one thousand wafers worth of data spread over two generations of technology nodes covering(More)
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