John C. Tremblay

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A Ka-Band high power GaN/SiC reflective SPDT Switch MMIC is demonstrated with unprecedented 49dBm P1dB and at least 58dBm survival threshold. The key enabling semiconductor technology is Raytheon's mm-Wave GaN HEMT with 1.36 ohm-mm Ron and 0.131 pF/mm Coff. Measured insertion loss is better than 1.3 dB over 27-31 GHz, and the minimum insertion loss of 0.8(More)
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