Jobymol Jacob

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The shortcomings of quasi-static and partitioned charge-based models are quantitatively demonstrated for 1-D SiGe heterojunction bipolar transistors. This points out the need to include higher order frequency-dependent terms, i.e., nonquasi-static effects in the model. Three different implementation-suitable modeling approaches are presented with associated(More)
A physics based model for the non-quasi-static (NQS) effects occurring in heterojunction bipolar transistors (HBTs) is presented. Following classical transistor theory, partitioned charge based (PCB) approach is extended to additionally model small-signal frequency-dependent (trans-) conductances. A new large-signal model is implemented in Verilog-A, and is(More)
A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence(More)
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