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Stable and self-starting mode-locking of a Tm:KLu(WO(4))(2) crystal laser is demonstrated using a transmission-type single-walled carbon nanotube (SWCNT) based saturable absorber (SA). These experiments in the 2 microm regime utilize the E11 transition of the SWCNTs for nonlinear saturable absorption. The recovery time of the SWCNT-SA is measured by… (More)
High-quality monoclinic planar waveguide crystals of Tm-doped KY(WO4)2 codoped with Gd3+ and Lu3+ were grown by liquid-phase epitaxy. For the first time, planar waveguide lasing was demonstrated in a monolithic cavity in the 2 µm spectral range. The laser was operated in the Q-switched mode using a Cr2+:ZnSe crystal as saturable absorber and in the… (More)
Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the… (More)
We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100… (More)
Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH(3) gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapor-solid-solid seeding… (More)
We demonstrate continuous wave (CW) room temperature laser operation of the monoclinic Ho(3+)-doped KLu(WO(4))(2) crystal using a diode-pumped Tm(3+):KLu(WO(4))(2) laser for in-band pumping. The slope efficiency achieved amounts to ~55% with respect to the absorbed power and the maximum output power of 648 mW is generated at 2078 nm.
Buried channel waveguides were fabricated by liquid phase epitaxial growth of a lattice-matched KY(0.58)Gd(0.22)Lu(0.17)Tm(0.03)(WO4)2 film on a microstructured KY(WO4)2 substrate. Channels were transferred to the substrates by standard photolithography and Ar-ion milling. The bottom and sidewalls of the milled channels were smooth enough (rms roughness =… (More)
A diode-pumped thin-disk laser based on Tm:KLu(WO4)2/KLu(WO4)2 epitaxies is realized. The emission is in the 1850-1945 nm spectral range for Tm-doping between 5 and 15 at. %. The maximum slope efficiency of 47% with respect to the absorbed power obtained with 5 at. % Tm:KLu(WO4)2/KLu(WO4)2 corresponds to a maximum output power of ~6 W in cw operation.
KTiOPO(4) (KTP) nanocrystals have been synthesized by the modified Pechini method using ethylenediaminetetraacetic acid (EDTA) and ethylene glycol (EG) as chelating and sterification agents, respectively. Orthorhombic KTP has been obtained by calcination at 1073 K for several hours. Differential thermal and thermogravimetric (DTA-TG) analyses have been used… (More)
We report the formation of two-dimensional disordered arrays of poly(methyl)methacrylate (PMMA) microcolumns with embedded single size distribution of Lu0.990Er0.520Yb0.490 nanocrystals, (Er,Yb):Lu2O3, using a disordered porous silicon template. The cubic (Er,Yb):Lu2O3 nanocrystals, which crystallize into the cubic system with Ia3¯ space group, were… (More)