Joakim Nilsson

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Sparse signal models with learned dictionaries of morphological features provide efficient codes in a variety of applications. Such models can be useful to reduce sensor data rates and simplify the communication, processing and analysis of information, provided that the algorithm can be realized in an efficient way and that the signal allows for sparse(More)
The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7–3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power(More)
The design of a 450nW bandgap temperature sensor in the 0 to 175°C range is presented. The design demonstrates a leakage current compensation technique that is useful for low-power designs where transistor performance is limited. The technique mitigates the effects of leakage in Brokaw bandgap references by limiting the amount of excess current that(More)
The use of rock bolts in the mining industry is a widely used approach for increasing mine stability. However, when compared to the automation industry, where the use of sensors and real-time monitoring of processes have evolved rapidly, the use rock bolts have not changed a lot during the last 100 years. What is missing are technologies for keeping(More)
BACKGROUND Recombinant adenovirus vectors and transfection agents comprising cationic lipids are widely used as gene delivery vehicles for functional expression in cultured cells. Consequently, these tools are utilized to investigate the effects of functional over-expression of proteins on insulin mediated events. However, we have previously reported that(More)
—A concept for doing accurate monitoring of temperature in power semiconductor modules is proposed. The concept involves glueing wireless single-chip temperature sensors with on-chip coils in direct contact with power semiconductor devices within their modules. Direct contact results in accurate temperature measurements while wireless technology such as(More)
Key GaN HEMT front-end circuits for next generation AESA radar/EW applications are presented. The circuits are an S-band 20 W MMIC HPA reaching 50 % measured PAE, a two-stage S-band MMIC LNA showing a measured NF of 1.3 dB, and a DC-18 GHz SPDTs showing a measured insertion loss of less than 2 dB at 18 GHz. Furthermore, a 2–18 GHz front-end circuit(More)
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