Jo-Won Lee

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SUMMARY We report a fast single element nonvolatile memory that employs amorphous to crystalline phase change. Temperature change is induced within a single electronic element in confined geometry transistors to cause the phase change. This novel phase change memory (PCM) operates without the need for charge transport through insulator films for charge(More)
We have explored the properties of SiC-based epitaxial graphene grown in a cold wall UHV chamber. The effects of the SiC surface orientation and silicon loss rate were investigated by comparing the characteristics of each formed graphene. Graphene was grown by thermal decomposition on both the silicon (0001) and carbon (000-1) faces of on-axis(More)
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