Jo Shien Ng

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This paper reports results obtained on 4.3 μm and 2.2 μm cutoff Hg1-xCdxTe electron avalanche photodiodes (EAPDs) with a cylindrical, “p-around-n” geometry that favors electron injection. These APDs are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, k = αh/αe, of(More)
Articles you may be interested in Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-in photodiodes transferred on silicon Appl. Investigation into the aging effect of experiment use on x-ray diode photocathodes, and the calibration of p-in silicon diodes Rev. Comparison of nonlinear and nonstationary response of conventional and(More)
Increasing reliance on the Internet places greater and greater demands for high-speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes(More)
An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which(More)
The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 nm. A peak responsivity of 5 mA/W was observed at 1280 nm, with an absorption tail extending beyond 1300 nm, while the(More)
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature(More)
Electroluminescence (EL) measurements have been performed on a set of In(Ga)As–GaAs quantum-dot (QD) structures with varying spacer layer growth temperature. At room temperature and low injection current, a superlinear dependence of the integrated EL intensity (IEL) on the injection current is observed. This superlinearity decreases as the spacer layer(More)
An Analytical Band Monte Carlo model was used to investigate the temperature dependence of impact ionization in InAs. The model produced an excellent agreement with experimental data for both avalanche gain and excess noise factors at all temperatures modeled. The gain exhibits a positive temperature dependence whilst the excess noise shows a very weak(More)
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al1-x Ga x As0.56Sb0.44 p-i-n diode wafers (Ga composition from 0 to(More)