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—Calculations are carried out to optimize the width of the InP avalanche region in high speed APD-based optical receivers. The model includes the effects of intersymbol interference, tunneling current, avalanche noise and its correlation with the stochastic avalanche duration. A minimum sensitivity of ~-28.8 dBm is predicted at an optimal width of ~180 nm(More)
Articles you may be interested in Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-in photodiodes transferred on silicon Appl. Investigation into the aging effect of experiment use on x-ray diode photocathodes, and the calibration of p-in silicon diodes Rev. Comparison of nonlinear and nonstationary response of conventional and(More)
The analytical calculation of the bit error rate (BER) of digital optical receivers that employ avalanche photodiodes (APDs) is challenging due to 1) the stochastic nature of the avalanche photodiode's impulse-response function and 2) the presence of intersymbol interference (ISI). At ultrafast transmission rates, ISI becomes a dominant component of the(More)
InGaAsN is a promising material system to enable low-cost GaAs-based detectors to operate in the telecommunication spectrum, despite the problems posed by the low growth temperature required for nitrogen incorporation. We demonstrate that InGaAsN p +-in + structures with nominal In and N fraction of 10% and 3.8%, grown by molecular beam epitaxy (MBE) under(More)
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature(More)
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