Jiunn-Jye Luo

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The quantum dot (QD) resonant tunneling diode (RTD) with Al/sub x/Ga/sub 1-x/As double-barriers has been investigated under operating large temperature ranges. A superior temperature-stability of peak-to-valley current ratio (PVR) is demonstrated. The electrons of resonant tunneling transport via nm-scale InAs quantum dots buried in GaAs spacer layers(More)
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