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A 4–10 GHz fully-integrated power amplifier (PA) is demonstrated using a 0.15-μm GaAs pHEMT process. This PA employs a compact structure with 4-parallel 3-stacked-FET cells to obtain a broadband power performance within a very small chip size. The measurement results of this PA in the frequency range of 4–10 GHz show a gain flatness of(More)
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