Jingzhou Xu

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We have investigated the temperature dependence of photoluminescence ~PL! properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger(More)
We report the measurement of optically rectified terahertz (THz) wave power relative to the optical excitation area. Rectified THz wave power reaches its maximum when radius r of the optical excitation area is comparable to the center wavelength of the rectified THz radiation. When r is smaller than the center wavelength of the rectified THz radiation, an(More)
Transition of surface-plasmon resonance from out-of-plane photonic crystal effect is observed in a semiconductor array of subwavelength holes by optical pump-terahertz probe measurements. The dielectric properties of the photoexcited array are essentially altered by the intense optical excitation due to photogenerated free carriers. As a result, the array(More)
Aerosol filter samples were collected at a highelevation mountain observatory (4180 m a.s.l.) in the northeastern part of the Qinghai–Xizang (Tibet) Plateau (QXP) during summer 2012 using a low-volume sampler and a micro-orifice uniform deposit impactor (MOUDI). These samples were analyzed for water-soluble inorganic ions (WSIs), organic carbon (OC),(More)
Photoluminescence ~PL! and time-resolved photoluminescence ~TRPL! were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1 12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling(More)
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