Jing-jing Tan

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The reaction between Ni and amorphous SiGeC thin film on SiO<sub>2 </sub> substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling are used to check the sheet resistance, the phase formation and atomic distribution during the reaction. It is found that comparing with Ni reaction with(More)
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp<sub>2</sub>] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the(More)
Two new chromone glycosides, drynachromoside A (1), drynachromoside B (2), along with three known flavanones, 5,7,3',5'-tetrahydroxy-flavanone (3), 5,7,3',5'-tetrahydroxy-flavanone-7-O-β-d-glucopyranoside (4), and 5,7,3',5'-tetrahydroxy-flavanone-7-O-neohesperidoside (5), were isolated from the dry rhizomes of Drynaria fortunei by means of bio-active(More)
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited(More)
The properties of pulse plated copper electrodeposits (1 mum) on ruthenium (5nm)/TaSiN (5nm) diffusion barrier with current density ranging from 2 to 20 A/dm<sup>2</sup> are studied. The resistivity of the Cu film is about 2.7muOmegamiddotcm. A (111) preferential orientation is found in almost all cases, which would be good to electromigration performance.(More)
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