Jim A. Slinkman

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
Type-II (end of range) defects, produced by Ge+ implantation, were investigated as possible " detect0rs " for quantifying nonequilibrium interstitial concentrations following Bt implantation into silicon. The type-11 damage was created with a 100 keV (1 x 1015/cm2) Get implant into silicon followed by either a low-temperature (550 " C) or a high-temperature(More)
A point-defect-based model for the stress effects on dopant diffusion in silicon is presented. Variations in binding energies and diffusivities of dopant-defect pairs under hydrostatic pressure are modeled, and a pressure-dependent dopant diffusion equation is derived. New experimental work was performed on boron pileup near dislocation loops, and compared(More)
CMOS substrate current considerations play an important role in modern device design. Powerful, reliable and predictive simulation capabilities are essential to this effort. Such accurate substrate current simulations demand two requirements: knowledge of the E-field distribution, hence of the 2-D device doping profiles, and knowledge of the hot-carrier(More)
Nuclear spins of phosphorus [P] donor atoms in crystalline silicon are among the most coherent qubits found in nature. For their utilization in scalable quantum computers, distinct donor electron wavefunctions must be controlled and probed through electrical coupling by application of either highly localized electric fields or spin-selective currents. Due(More)
A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Gef implantation) and excess point defects generated from a low dose 1 X 10'4/cm2 Bf implant into silicon. The boron doping spike was grown in by chemical vapor deposition at a depth of 8000 A below the surface. The intrinsic diffusivity of the(More)
  • 1