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A vertical pnp BJTs on thin SOI is designed and characterized by using the mixed numerical two-dimensional process and device simulator (Sentaurus). The DC, frequency, and breakdown characteristics of the vertical pnp on SOI are simulated and analyzed. The peak of &#x03B2; is 85 at Vbe=&#x2212;0.7. The maximum of the cutoff frequency f<inf>&#x03C4;</inf>(More)
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