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A monolithic double-balanced graphene mixer integrated circuit (IC) has been successfully designed and fabricated. The IC adopted the cross-coupled resistive mixer topology, integrating four 500 nm-gate-length graphene field-effect transistors (GFETs), four on-chip inductors, and four on-chip capacitors. Passive-first-active-last fabrication flow was(More)
Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog circuits, and neuromorphic applications. The underlying resistive switching (RS) mechanism of ReRAM is suggested to be the formation and rupture of nanoscale conductive filament (CF) inside the(More)
CMOS compatible 200 mm two-layer-routing technology is employed to fabricate graphene field-effect transistors (GFETs) and monolithic graphene ICs. The process is inverse to traditional Si technology. Passive elements are fabricated in the first metal layer and GFETs are formed with buried gate/source/drain in the second metal layer. Gate dielectric of 3.1(More)
— Resistive switching memory with low switching current is critical for low-power application. In this letter, we successfully demonstrated a four-terminal resistive RAM device with ultra-low switching current. The device is SET by one pair of electrodes and RESET by the other. The rupture process of conductive filament can be resulted from electrochemical(More)
In complex oxides systems such as manganites, electronic phase separation (EPS), a consequence of strong electronic correlations, dictates the exotic electrical and magnetic properties of these materials. A fundamental yet unresolved issue is how EPS responds to spatial confinement; will EPS just scale with size of an object, or will the one of the phases(More)
Conductive-bridge random access memory (CBRAM) is considered a strong contender of the next-generation nonvolatile memory technology. Resistive switching (RS) behavior in CBRAM is decided by the formation/dissolution of nanoscale conductive filament (CF) inside RS layer based on the cation injection from active electrode and their electrochemical reactions.(More)
Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6(More)
For strongly correlated oxides, it has been a long-standing issue regarding the role of the chemical ordering of the dopants on the physical properties. Here, using unit cell by unit cell superlattice growth technique, we determine the role of chemical ordering of the Pr dopant in a colossal magnetoresistant (La(1-y)Pr(y))(1-x)Ca(x)MnO3 (LPCMO) system,(More)
We propose two-dimensional gratings comprised of a large number of identical and similarly oriented hexagonal holes for the high order diffraction suppression. An analytical study of the diffraction property for such gratings, based on both square and triangle arrays, is described. The dependence of the high order diffraction property on the hole shape and(More)
The interesting transport and magnetic properties in manganites depend sensitively on the nucleation and growth of electronic phase-separated domains. By fabricating antidot arrays in La0.325Pr0.3Ca0.375MnO3 (LPCMO) epitaxial thin films, we create ordered arrays of micrometer-sized ferromagnetic metallic (FMM) rings in the LPCMO films that lead to(More)