Jianwu Sun

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A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si<sub>1-x</sub>Ge<sub>x</sub> surfaces.
This paper presents an electrically-mediated process for copper metallization of semiconductor interconnect features. Compared to traditional metallization processes, the proposed electrochemical deposition process uses a singlecomponent bath that contains no difficult-to-control organic accelerators and levelers. The feasibility of the process is(More)
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