Jianshi Tang

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Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as(More)
As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key(More)
In this work, we present several strategies of making robust carbon nanotube (CNT) n-type field-effect transistors (NFETs). One approach uses low-work function metal contacts to enable electron injection into CNT for NFET operation while using pre-defined oxide trenches to protect the sidewalls of such easily oxidized contacts. The sidewall-protected NFETs(More)
Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube(More)
CNT-based complementary logic using low-temperature processed end-boned metal contacts are demonstrated. This new form of end-bonded contact is made by carbon dissolution into metal contacts with high carbon solubility (e.g., Ni and Co), which requires only low annealing temperature (400−600 °C). As-fabricated end-bonded Ni contacts serve as(More)
Carbon nanotube (CNT) has been envisioned as a promising channel replacement for silicon in sub-5 nm logic technology nodes. Successful implementation of CNT-based CMOS technology requires high-quality low-resistance contacts for both <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>- and <inline-formula> <tex-math(More)
The realization and application of spintronic devices would be dramatically advanced if room-temperature ferromagnetism could be integrated into semiconductor nanostructures, especially when compatible with mature silicon technology. Herein, we report the observation of such a system - an Si/MnGe superlattice with quantum dots well aligned in the vertical(More)
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